Title :
Schottky emitter high holding voltage ESD clamp in BCD power technology
Author :
Chen, Chi-Kuang ; Huang, Chien-Fu ; Chang, Yi-Feng ; Lee, Jam-Wem ; Cheng, Shui-Ming ; Song, Ming-Hsiang
Author_Institution :
TSMC, Hsinchu, Taiwan
Abstract :
A holding voltage boosting methodology for NPN ESD clamp was proposed. By simply changing emitter contact from Ohmic to Schottky, Vh can be increased about 10V without degrading its Ron and It2 level. TCAD simulation is used to explain the mechanism and simulated TLP are well matched with silicon results.
Keywords :
Schottky barriers; electrostatic discharge; ohmic contacts; BCD power technology; NPN ESD clamp; Schottky contact; Schottky emitter high holding voltage ESD clamp; TCAD simulation; emitter contact; holding voltage boosting methodology; ohmic contact; transmission line pulser; Breakdown voltage; Electric potential; Electrostatic discharges; Junctions; Pulse measurements; Space charge; Voltage measurement;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-1467-1
