DocumentCode :
1841165
Title :
PMOS-triggered PMLSCR for high voltage application
Author :
Wang, Shih-Yu ; He, Chieh-Wei ; He, Yong-Han ; Chang, Yao-Wen ; Lu, Tao-Cheng ; Chen, Kuang-Chao ; Lu, Chih-Yuan
Author_Institution :
Macronix Int. Co., Ltd., Hsinchu, Taiwan
fYear :
2012
fDate :
9-14 Sept. 2012
Firstpage :
1
Lastpage :
6
Abstract :
A novel PMOS-triggered PMLSCR for high voltage applications is proposed. During normal operation, the PMLSCR keeps good noise immunity with an inherently high trigger voltage. The trigger voltage can be effectively reduced during ESD events and better turn-on uniformity can be obtained. Moreover, mistrigger immunity of the proposed scheme is also verified.
Keywords :
MOSFET; electrostatic discharge; thyristors; trigger circuits; ESD events; PMOS-triggered PMLSCR; high voltage application; noise immunity; Earth Observing System; Electrostatic discharges; Logic gates; Thyristors; Trigger circuits; Video recording; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location :
Tucson, AZ
ISSN :
0739-5159
Print_ISBN :
978-1-4673-1467-1
Type :
conf
Filename :
6333327
Link To Document :
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