DocumentCode
1841165
Title
PMOS-triggered PMLSCR for high voltage application
Author
Wang, Shih-Yu ; He, Chieh-Wei ; He, Yong-Han ; Chang, Yao-Wen ; Lu, Tao-Cheng ; Chen, Kuang-Chao ; Lu, Chih-Yuan
Author_Institution
Macronix Int. Co., Ltd., Hsinchu, Taiwan
fYear
2012
fDate
9-14 Sept. 2012
Firstpage
1
Lastpage
6
Abstract
A novel PMOS-triggered PMLSCR for high voltage applications is proposed. During normal operation, the PMLSCR keeps good noise immunity with an inherently high trigger voltage. The trigger voltage can be effectively reduced during ESD events and better turn-on uniformity can be obtained. Moreover, mistrigger immunity of the proposed scheme is also verified.
Keywords
MOSFET; electrostatic discharge; thyristors; trigger circuits; ESD events; PMOS-triggered PMLSCR; high voltage application; noise immunity; Earth Observing System; Electrostatic discharges; Logic gates; Thyristors; Trigger circuits; Video recording; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location
Tucson, AZ
ISSN
0739-5159
Print_ISBN
978-1-4673-1467-1
Type
conf
Filename
6333327
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