Full and automated determination of MOS transistor parameters in the linear region

Author

Pelloie, J.L.

Author_Institution

LETI/IRDI, Grenoble, France

fYear

1990

fDate

5-7 March 1990

Firstpage

123

Lastpage

128

Abstract

A measurement technique is presented which allows the determination of all the parameters needed to describe the linear behavior of an MOS transistor which is valid for a large range of gate voltages and drawn lengths. Analytical models can be derived from these results and introduced in simulators for mobility and access resistance. A comparison of different measurement techniques used to obtain the effective gate length is given. It is demonstrated that one simple equation is sufficient to calculate with the good precision the current in the linear region. All the techniques were implemented in a S450 Keithley parametric tester.<>

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor device testing; S450 Keithley parametric tester; access resistance; all parameters determination; analytical models; automated determination of MOS transistor parameters; different measurement techniques; drawn gate length; effective gate length; large range of gate voltages; linear behavior; linear region; measurement technique; mobility; Atomic measurements; CMOS technology; Electrical resistance measurement; Equations; MOS devices; MOSFET circuits; Measurement techniques; Testing; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/ICMTS.1990.67891

Filename

67891