DocumentCode :
1841713
Title :
Dynamic X-parameters*: Behavioral modeling in the presence of long term memory effects
Author :
Verspecht, Jan ; Root, David ; Nielsen, Troels
Author_Institution :
Agilent Technol., Inc., Santa Clara, CA, USA
fYear :
2012
fDate :
12-14 March 2012
Firstpage :
1
Lastpage :
4
Abstract :
An original way is presented to model memory effects of RF and microwave components by extending the X-parameter model. The approach can be used to model hard nonlinear behavior and long term memory effects and is valid for all possible modulation formats, for all possible peak-to-average ratios and for a wide range of modulation bandwidths. The model works for pulsed signals as well as for two-tone and multitone signals. The model has been validated by measurements and is compatible with existing harmonic balance simulators.
Keywords :
microwave devices; modulation; signal processing; RF component; dynamic X-parameter model; hard nonlinear behavior modeling; harmonic balance simulator; long term memory effect modeling; microwave component; modulation bandwidth; modulation format; multitone signal; peak-to-average ratio; pulsed signal; two-tone signal; Kernel; Mathematical model; Microwave amplifiers; Microwave circuits; Modulation; Wideband; behavioral model; frequency domain; measurements; memory effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location :
Ilmenau
Print_ISBN :
978-1-4577-2096-3
Electronic_ISBN :
978-3-9812668-4-9
Type :
conf
Filename :
6185156
Link To Document :
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