DocumentCode :
1841752
Title :
Exponential-enhanced characteristic of MOS transistors and its application to log-domain circuits
Author :
Fernández, Daniel ; Madrenas, Jordi ; Kapusta, Dominik ; Michalik, Piotr
Author_Institution :
Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona
fYear :
2008
fDate :
18-21 May 2008
Firstpage :
2334
Lastpage :
2337
Abstract :
In this paper we present a fully CMOS-compatible circuit that extends the weak-inversion exponential characteristic of a MOS transistor to seven decades of current. This circuit can be used to implement log-domain or translinear circuits up to the strong inversion region, allowing highly-accurate implementations of translinear loop functions and higher biasing currents (and potentially higher frequency operation) than MOS weak-inversion biased log-domain circuits.
Keywords :
CMOS integrated circuits; MOSFET; CMOS compatible circuit; MOS transistors; log-domain circuits; translinear circuits; translinear loop functions; weak inversion exponential; Application software; Bipolar transistors; CMOS process; Circuits; Diodes; Equations; Frequency; MOS devices; MOSFETs; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
Type :
conf
DOI :
10.1109/ISCAS.2008.4541922
Filename :
4541922
Link To Document :
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