Title :
Active transversal S-band filter using lumped elements in standard 0.13 µm CMOS
Author :
Dalpatadu, Radike ; Mouthaan, Koen
Author_Institution :
Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
An active S-band filter with high out-of-band rejection and good gain in a standard 0.13 μm CMOS process is fabricated. The filter topology is based on the transversal filter concept using lumped elements. The measured passband is from 2.3 - 3.8 GHz with an insertion gain of 6 dB and a rejection better than 35 dB at 1.5 GHz and 5.0 GHz. Input and output return losses are better than 10 and 15 dB respectively. The fabricated filter has a total chip area of 1×2 mm2.
Keywords :
field effect MMIC; microwave filters; CMOS process; active transversal S-band filter; frequency 1.5 GHz; frequency 2.3 GHz to 3.8 GHz; frequency 5.0 GHz; gain 6 dB; size 0.13 mum; Band pass filters; CMOS integrated circuits; Gain; Microwave filters; Radio frequency; Transversal filters; CMOS active filters; RF active filters; active inductors; lumped and transversal filtering; quality factors;
Conference_Titel :
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location :
Ilmenau
Print_ISBN :
978-1-4577-2096-3
Electronic_ISBN :
978-3-9812668-4-9
