DocumentCode
1841846
Title
IC chip stress during plastic package molding
Author
Palmer, D.W. ; Benson, D.A. ; Peterson, D.W. ; Sweet, J.N.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
1998
fDate
25-28 May 1998
Firstpage
1326
Lastpage
1331
Abstract
Approximately 95% of the world´s integrated chips are packaged using a hot, high pressure transfer molding process. The stress created by the flow of silica powder loaded epoxy can displace the fine bonding wires and can even distort the metallization patterns under the protective chip passivation layer. In this study we developed a technique to measure the mechanical stress over the surface of an integrated circuit during the molding process. A CMOS test chip with 25 diffused resistor stress sensors was applied to a commercial lead frame. Both compression and shear stresses were measured at all 25 locations on the surface of the chip every 50 milliseconds during molding. These measurements have a fine time and stress resolution which should allow comparison with computer simulation of the molding process, thus allowing optimization of both the manufacturing process and mold geometry
Keywords
CMOS integrated circuits; integrated circuit measurement; integrated circuit packaging; integrated circuit testing; moulding; plastic packaging; production testing; stress measurement; CMOS test chip; IC chip stress; bonding wires; diffused resistor stress sensors; manufacturing process; mechanical stress; metallization patterns; mold geometry; plastic package molding; stress resolution; time resolution; Bonding; Integrated circuit measurements; Metallization; Plastic integrated circuit packaging; Powders; Semiconductor device measurement; Silicon compounds; Stress measurement; Transfer molding; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components & Technology Conference, 1998. 48th IEEE
Conference_Location
Seattle, WA
ISSN
0569-5503
Print_ISBN
0-7803-4526-6
Type
conf
DOI
10.1109/ECTC.1998.678916
Filename
678916
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