• DocumentCode
    1841847
  • Title

    Complete characterization of low-noise devices at microwave frequencies: two alternative procedures for HEMTs

  • Author

    Caddemi, A. ; di Paola, A. ; Sannino, M.

  • Author_Institution
    Dipartimento di Ingegneria Elettrica - UniversitÃ\xa0 di Palermo, Laboratorio di Elettronica delle Microonde Viale delle Scienze - 90128, Palermo - ITALY Tel./Fax ++39-91-590404
  • Volume
    28
  • fYear
    1995
  • fDate
    Nov. 30 1995-Dec. 1 1995
  • Firstpage
    95
  • Lastpage
    103
  • Abstract
    The complete characterization of microwave transistors in terms of noise, gain and scattering parameters (0{,G } and [SI, respectively) vs. frequency and bias conditions is the first and most important step to design low-noise amplifiers (LNA).
  • Keywords
    Circuit noise; Gain measurement; HEMTs; Impedance matching; MODFETs; Microwave frequencies; Noise figure; Noise measurement; Power measurement; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ARFTG Conference Digest-Fall, 46th
  • Conference_Location
    Scottsdale, AZ, USA
  • Print_ISBN
    0-7803-5686-1
  • Type

    conf

  • DOI
    10.1109/ARFTG.1995.327138
  • Filename
    4119816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1841847