Title :
Complete characterization of low-noise devices at microwave frequencies: two alternative procedures for HEMTs
Author :
Caddemi, A. ; di Paola, A. ; Sannino, M.
Author_Institution :
Dipartimento di Ingegneria Elettrica - UniversitÃ\xa0 di Palermo, Laboratorio di Elettronica delle Microonde Viale delle Scienze - 90128, Palermo - ITALY Tel./Fax ++39-91-590404
fDate :
Nov. 30 1995-Dec. 1 1995
Abstract :
The complete characterization of microwave transistors in terms of noise, gain and scattering parameters (0{,G } and [SI, respectively) vs. frequency and bias conditions is the first and most important step to design low-noise amplifiers (LNA).
Keywords :
Circuit noise; Gain measurement; HEMTs; Impedance matching; MODFETs; Microwave frequencies; Noise figure; Noise measurement; Power measurement; Scattering parameters;
Conference_Titel :
ARFTG Conference Digest-Fall, 46th
Conference_Location :
Scottsdale, AZ, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1995.327138
