Title :
A 1.25Gb/s half-rate clock and data recovery circuit
Author :
Ching-Yuan Yan ; Lee, Cheng-Hsing ; Lee, Yu
Author_Institution :
Dept. of Electr. Eng., National Chung-Hsing Univ., Taichung, Taiwan
Abstract :
This paper presents a clock and data recovery (CDR) circuit with a new half-rate phase detector. The half-rate CDR circuit senses the input random data at full rate but employs a VCO running at a half frequency of the input data. At the locked condition, the circuit will generate two 625-Mb/s output sequences. The new half-rate phase detector applicable to the 1.25-Gb/s NRZ data stream is adopted to reduce the dead zone in phase characteristic. The CDR circuit is fabricated using the 0.35μm CMOS technology and occupies 1800μm×1800μm chip area. Total power consumption of the chip is 54.8 mW under a 3-V supply voltage.
Keywords :
CMOS integrated circuits; phase detectors; synchronisation; voltage-controlled oscillators; 0.35 micron; 1.25 Gbit/s; 3 V; 54.8 mW; 625 Mbit/s; CDR circuit; NRZ data stream; VCO; clock and data recovery circuit; half-rate phase detector; locked condition; power consumption; CMOS technology; Circuits; Clocks; Detectors; Energy consumption; Frequency; Optical signal processing; Phase detection; Voltage; Voltage-controlled oscillators;
Conference_Titel :
VLSI Design, Automation and Test, 2005. (VLSI-TSA-DAT). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9060-1
DOI :
10.1109/VDAT.2005.1500033