Title :
A low power SiGe HBT LNA For UWB applications
Author :
Hamouda, M. ; Fischer, G. ; Weigel, R. ; Ussmueller, T.
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
A low noise amplifier (LNA) is implemented in this work for ultra wide band (UWB) localization and sensing systems within a wide frequency range starting from 400MHz and up to 10GHz. The topology used is a resistive shunt feedback and a peaking inductance in series with the output transistor to achieve the desired bandwidth and have better noise performance. The LNA is fabricated in low cost 0.25μm 92GHz fmax SiGe-HBT-BiCMOS process technology. The area of the manufactured chip is 0.73mm2. The achieved gain is 12dB with a NF less than 3.7dB over the entire frequency range while the consumed power is only 14.5mW.
Keywords :
BiCMOS integrated circuits; amplifiers; feedback; heterojunction bipolar transistors; ultra wideband technology; HBT-BiCMOS process technology; SiGe; UWB applications; frequency 400 MHz to 10 GHz; frequency 92 GHz; inductance peaking; low noise amplifier; low power HBT LNA; manufactured chip area; output transistor; resistive shunt feedback; size 0.25 mum; ultra wide band localization systems; ultra wide band sensing systems; Bandwidth; Impedance; Impedance matching; Linearity; Noise; Noise measurement; Transistors; Low power; SiGe HBT; low noise amplifier; noise figure; ultra wide band (UWB);
Conference_Titel :
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location :
Ilmenau
Print_ISBN :
978-1-4577-2096-3
Electronic_ISBN :
978-3-9812668-4-9
