Title :
Solid-state 8 GHz transient signal digitizer characterization
Author :
Ghis, A. ; Ouvrier-Buffet, P. ; Rolland, N. ; Benlarbi-Delai, A. ; Rolland, P.A. ; Glay, D. ; Jaeger, D.
Author_Institution :
Lab d´Electron. et de Technol. de l´Inf., CEA, Centre d´Etudes Nucleaires de Grenoble, France
Abstract :
A new technique leading to an accurate sampling of single shot high frequency signals is described. This technique provides 20 GHz sampling of electrical pulses up to 8 GHz bandwidth with a 60 dB dynamic range. The prototype of a transient digitizer involving this new principle is tested, with the goal of a new product development. We present the theory of the sampling operations, the outline of the prototype, the design and fabrication of an innovative set of specific GaAs MMICs, the assembling of the complete system and the first results obtained in performance characterization.
Keywords :
HEMT integrated circuits; III-V semiconductors; analogue-digital conversion; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit measurement; signal sampling; transients; 20 GHz; 8 GHz; GaAs; GaAs MMICs; GaAs p-HEMT technology; bandwidth; dynamic range; electrical pulses; performance characterization; sampling operations; signal sampling; single shot high frequency signals; solid-state transient signal digitizer characterization; system assembling; transient digitizer prototype; Bandwidth; Dynamic range; Fabrication; Frequency; Gallium arsenide; Product development; Prototypes; Sampling methods; Solid state circuits; Testing;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012180
