Solid-state 8 GHz transient signal digitizer characterization

Author

Ghis, A. ; Ouvrier-Buffet, P. ; Rolland, N. ; Benlarbi-Delai, A. ; Rolland, P.A. ; Glay, D. ; Jaeger, D.

Author_Institution

Lab d´Electron. et de Technol. de l´Inf., CEA, Centre d´Etudes Nucleaires de Grenoble, France

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1673

Abstract

A new technique leading to an accurate sampling of single shot high frequency signals is described. This technique provides 20 GHz sampling of electrical pulses up to 8 GHz bandwidth with a 60 dB dynamic range. The prototype of a transient digitizer involving this new principle is tested, with the goal of a new product development. We present the theory of the sampling operations, the outline of the prototype, the design and fabrication of an innovative set of specific GaAs MMICs, the assembling of the complete system and the first results obtained in performance characterization.

Keywords

HEMT integrated circuits; III-V semiconductors; analogue-digital conversion; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit measurement; signal sampling; transients; 20 GHz; 8 GHz; GaAs; GaAs MMICs; GaAs p-HEMT technology; bandwidth; dynamic range; electrical pulses; performance characterization; sampling operations; signal sampling; single shot high frequency signals; solid-state transient signal digitizer characterization; system assembling; transient digitizer prototype; Bandwidth; Dynamic range; Fabrication; Frequency; Gallium arsenide; Product development; Prototypes; Sampling methods; Solid state circuits; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012180

Filename

1012180