Title :
Sampling circuit on silicon substrate for frequencies beyond 50 GHz
Author :
Abele, P. ; Birk, M. ; Behammer, D. ; Kibbel, H. ; Trasser, A. ; Maier, P. ; Schad, K.-B. ; Sonmez, E. ; Schumacher, H.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
We have fabricated and measured a sampling circuit on high resistivity silicon substrate. The circuit incorporates a nonlinear transmission line to provide the sampling pulses. The sampling circuit was measured up to 50 GHz, with a voltage conversion loss lower than 11 dB and varying in this range by just 2.3 dB. This is the first presentation of a sampling circuit on silicon substrate with a corner frequency beyond 50 GHz.
Keywords :
elemental semiconductors; high-speed integrated circuits; microwave measurement; signal processing equipment; signal sampling; silicon; time-domain analysis; 11 dB; 50 GHz; Si; corner frequency; high resistivity substrate; high-speed switching circuits; nonlinear transmission lines; picosecond sampling pulses; sampling circuit; sampling pulses; temporal resolution; time-domain characterization; voltage conversion loss; Circuit testing; Distributed parameter circuits; Frequency; Gallium arsenide; Pulse circuits; Sampling methods; Schottky diodes; Silicon; Substrates; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012182
