DocumentCode
1842083
Title
W-band amplifier with 8 dB gain based on InPHBT transferred-substrate technology
Author
Al-Sawaf, Thualfiqar ; Meliani, Chafik ; Heinrich, Wolfgang ; Krämer, Tomas
Author_Institution
Leibniz-Inst. fur Hochstfrequenztechnik (FBH), Ferdinand-Braun-Inst., Berlin, Germany
fYear
2012
fDate
12-14 March 2012
Firstpage
1
Lastpage
4
Abstract
In this paper, the design and characterization of a single-stage amplifier based on InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) in transferred - substrate technology is reported. The two fingers amplifier,with a total area of 2×0.8×5 μm2 and an ft and fmax of 383 and 370 GHz, respectively, exhibits a small signal gain of 8 dB at 90 GHz.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; wideband amplifiers; InP-InGaAs-InP; InPHBT transferred-substrate technology; W-band amplifier; double heterojunction bipolar transistors; fingers amplifier; frequency 370 GHz; frequency 383 GHz; frequency 90 GHz; gain 8 dB; single-stage amplifier design; DH-HEMTs; Gain; Indium phosphide; Integrated circuit modeling; Power amplifiers; Substrates; Amplifier; Double heterojunction; InP HBT; W-band; single stage; transferred substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location
Ilmenau
Print_ISBN
978-1-4577-2096-3
Electronic_ISBN
978-3-9812668-4-9
Type
conf
Filename
6185173
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