Title :
Characterization of A 2 GHz Submicron Bipolar 60 Watt Power Transistor with Single Tone, Multi-Tone, and Cdma Signals
Author :
Shaw, Michael ; Wood, Alan
Author_Institution :
Motorola Semiconductor Products Sector, 5005 E. McDowell Rd., Phoenix, AZ 85008, R23707@email.sps.mot.com
Abstract :
Linearity characterization of RF power devices usually involves a CW power sweep showing the 1 dB compression point of the device. RF power amplifier designers are requiring that devices be characterized with ¿application type¿ signals. In this paper single tone, multi-tone and CDMA signals are used to characterize a 60 watt submicron bipolar device. Relationships between device characteristics such as 1 dB compression, intermodulation distortion, and spectrum regeneration are discussed.
Keywords :
Intermodulation distortion; Linearity; Multiaccess communication; Peak to average power ratio; Power amplifiers; Power transistors; RF signals; Radio frequency; Radiofrequency amplifiers; Signal design;
Conference_Titel :
ARFTG Conference Digest-Spring, 47th
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1996.327160
