DocumentCode
1842192
Title
Characterization of A 2 GHz Submicron Bipolar 60 Watt Power Transistor with Single Tone, Multi-Tone, and Cdma Signals
Author
Shaw, Michael ; Wood, Alan
Author_Institution
Motorola Semiconductor Products Sector, 5005 E. McDowell Rd., Phoenix, AZ 85008, R23707@email.sps.mot.com
Volume
29
fYear
1996
fDate
35217
Firstpage
26
Lastpage
31
Abstract
Linearity characterization of RF power devices usually involves a CW power sweep showing the 1 dB compression point of the device. RF power amplifier designers are requiring that devices be characterized with ¿application type¿ signals. In this paper single tone, multi-tone and CDMA signals are used to characterize a 60 watt submicron bipolar device. Relationships between device characteristics such as 1 dB compression, intermodulation distortion, and spectrum regeneration are discussed.
Keywords
Intermodulation distortion; Linearity; Multiaccess communication; Peak to average power ratio; Power amplifiers; Power transistors; RF signals; Radio frequency; Radiofrequency amplifiers; Signal design;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest-Spring, 47th
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-5686-1
Type
conf
DOI
10.1109/ARFTG.1996.327160
Filename
4119832
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