Title :
Measurement and Modeling of Picosecond Step Response of GaAs MESFETs
Author :
Law, Christine S. ; Vendelin, George D. ; Van der Weide, Daniel W.
Author_Institution :
Santa Clara University, Santa Clara, CA 95053
Abstract :
The step response of a GaAs MESFET was measured using three techniques. The results were then compared with HP MDS using two nonlinear device models (EEFET3 and Statz-Pucel). Small and large signal TDT measurements give 15 - 50 ps switching times with a small bias dependence, increasing with drain current.
Keywords :
Application software; Current measurement; Gallium arsenide; MESFETs; Measurement techniques; Oscilloscopes; Power system transients; Sampling methods; Time domain analysis; Transmission line measurements;
Conference_Titel :
ARFTG Conference Digest-Spring, 47th
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1996.327177
