Title :
Emerging memory technologies - mainstream or hearsay?
Author :
Natarajan, Srcudhar ; Alvandpour, Atila
Author_Institution :
Emerging Memory Technol., Kanata, Ont., Canada
Abstract :
Ideal characteristics of any universal memory technology should be to meet the performance of a SRAM, density as in DRAM and non-volatility (like Flash). Flash memories have been dominant in the non-volatile race based on relatively standard silicon design processes. Memory dominance on SoC´s continues to increase and hence tomorrow´s high quality SOC´s require high quality memory today. The emerging mainstream memory technology should be (1) a universal memory (2) a process solution (3) suitable for the SoC market. This paper will discuss a few emerging memory technologies that are being researched today (Natarajan, 2003).
Keywords :
DRAM chips; SRAM chips; flash memories; integrated circuit design; integrated circuit technology; system-on-chip; DRAM; Flash memories; SRAM; SoC market; memory technology; non-volatile memory; silicon design process; universal memory; CMOS technology; Costs; Electric resistance; Flash memory; Magnetic materials; Nonvolatile memory; Production; Random access memory; Silicon; Space technology;
Conference_Titel :
VLSI Design, Automation and Test, 2005. (VLSI-TSA-DAT). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9060-1
DOI :
10.1109/VDAT.2005.1500061
