• DocumentCode
    1842527
  • Title

    CMOS ASIC for MHz silicon BAW gyroscope

  • Author

    Shah, Jalpa ; Johari, Houri ; Sharma, Ajit ; Ayazi, Farrokh

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    2458
  • Lastpage
    2461
  • Abstract
    The paper reports a CMOS Interface IC designed for electrostatic actuation and read-out a 6 MHz Silicon Bulk Acoustic Wave (BAW) gyroscope. The supporting electronics for a high quality factor (Q>100,000) BAW gyroscope include: an electro-mechanical drive oscillator loop to excite the gyroscope, a low noise transimpedance front-end that offers gain of 126 dBOmega and 3-dB bandwidth of 26 MHz; and a Coriolis signal demodulator with minimum capacitance resolution of 0.014 aF/radicHz. The interface ASIC, a first for a high frequency BAW gyroscope, is fabricated in a 0.6 mum 2P3M CMOS process, occupies 2.25 mm2 and consumes 10.9 mW. The gyroscope system achieves a noise floor of 0.37deg/radichr/radicHz and rate sensitivity of 205 muW 7 sec.
  • Keywords
    bulk acoustic wave devices; electrostatic actuators; gyroscopes; BAW gyroscope; CMOS ASIC; bulk acoustic wave gyroscope; electro-mechanical drive oscillator loop; electrostatic actuation; Acoustic noise; Acoustic waves; Application specific integrated circuits; CMOS integrated circuits; Electrostatic actuators; Gyroscopes; Integrated circuit noise; Oscillators; Q factor; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4541953
  • Filename
    4541953