DocumentCode
1842527
Title
CMOS ASIC for MHz silicon BAW gyroscope
Author
Shah, Jalpa ; Johari, Houri ; Sharma, Ajit ; Ayazi, Farrokh
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2008
fDate
18-21 May 2008
Firstpage
2458
Lastpage
2461
Abstract
The paper reports a CMOS Interface IC designed for electrostatic actuation and read-out a 6 MHz Silicon Bulk Acoustic Wave (BAW) gyroscope. The supporting electronics for a high quality factor (Q>100,000) BAW gyroscope include: an electro-mechanical drive oscillator loop to excite the gyroscope, a low noise transimpedance front-end that offers gain of 126 dBOmega and 3-dB bandwidth of 26 MHz; and a Coriolis signal demodulator with minimum capacitance resolution of 0.014 aF/radicHz. The interface ASIC, a first for a high frequency BAW gyroscope, is fabricated in a 0.6 mum 2P3M CMOS process, occupies 2.25 mm2 and consumes 10.9 mW. The gyroscope system achieves a noise floor of 0.37deg/radichr/radicHz and rate sensitivity of 205 muW 7 sec.
Keywords
bulk acoustic wave devices; electrostatic actuators; gyroscopes; BAW gyroscope; CMOS ASIC; bulk acoustic wave gyroscope; electro-mechanical drive oscillator loop; electrostatic actuation; Acoustic noise; Acoustic waves; Application specific integrated circuits; CMOS integrated circuits; Electrostatic actuators; Gyroscopes; Integrated circuit noise; Oscillators; Q factor; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541953
Filename
4541953
Link To Document