Title :
A 10-Gb/s laser diode driver in 0.35 μm BiCMOS technology
Author :
Wang, Teng-Yi ; Chen, Wei-Zen ; Tsai, Chia-Ming ; Huang, Li-Ren ; Li, Day-Uei
Author_Institution :
Dept. of Electr. Eng., National Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35μm SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2psp-p. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 x 940 μm2.
Keywords :
BiCMOS integrated circuits; SONET; digital signal processing chips; driver circuits; high-speed integrated circuits; local area networks; network synthesis; optical modulation; 0.35 micron; 1.38 W; 10 Gbit/s; 10G Ethernet; 3.3 V; 40 to 100 mA; 47 ps; 7 V; BiCMOS technology; SONET OC-192; laser diode driver; negative Miller capacitor compensation; push-pull current switching; signal bandwidth enhancement; Bandwidth; BiCMOS integrated circuits; Capacitors; Diode lasers; Germanium silicon alloys; Optical design; Photonic band gap; Semiconductor device measurement; Silicon germanium; Time measurement;
Conference_Titel :
VLSI Design, Automation and Test, 2005. (VLSI-TSA-DAT). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9060-1
DOI :
10.1109/VDAT.2005.1500068
