Trapping effects in wide-bandgap microwave FETs

Author

Binari, S.C. ; Klein, P.B. ; Kazior, T.E.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1823

Abstract

It is well known that trapping effects can limit the output power performance of microwave field-effect transistors. This is particularly true for the wide-bandgap devices. In this paper, we review the various trapping phenomena observed in SiC and GaN-based FETs that contribute to compromised power performance. For both of these material systems, trapping effects associated with both the surface and with the layers underlying the active channel have been identified.

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; hole traps; microwave field effect transistors; silicon compounds; surface states; wide band gap semiconductors; AlGaN/GaN HEMTs; GaN MESFETs; GaN-based FETs; SiC MESFETs; SiC-based FETs; material systems; microwave field-effect transistors; output power performance; power performance; sub-active channel layers; trapping effects; trapping phenomena; wide-bandgap devices; wide-bandgap microwave FETs; Aluminum gallium nitride; Buffer layers; Electron traps; Gallium nitride; HEMTs; MESFETs; MODFETs; Microwave FETs; Microwave devices; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012217

Filename

1012217