DocumentCode :
1842733
Title :
10-Gb/s SiGe modulator drivers with 4.5 Vpp output swing
Author :
Li, Day-Uei ; Tsai, Chia-Ming ; Huang, Li-Ren
Author_Institution :
Ind. Technol. Res. Inst., SoC Technol. Center, Hsinchu, Taiwan
fYear :
2005
fDate :
27-29 April 2005
Firstpage :
261
Lastpage :
262
Abstract :
This paper presents 10-Gb/s modulator drivers employing novel cascode configuration with double output swing. The cascode drivers in 0.35μm SiGe BiCMOS technology exhibit high output swing of 4.5 Vpp. It is the highest value among reported silicon-based drivers.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; driver circuits; integrated circuit design; 0.35 micron; 10 Gbit/s; 4.5 V; BiCMOS technology; SiGe; SiGe modulator drivers; cascode configuration; cascode drivers; double output swing; silicon-based drivers; Bandwidth; BiCMOS integrated circuits; Bipolar transistors; Driver circuits; Feedback circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Power dissipation; Silicon germanium; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test, 2005. (VLSI-TSA-DAT). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9060-1
Type :
conf
DOI :
10.1109/VDAT.2005.1500070
Filename :
1500070
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1842733
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