Performance comparison of differential K-band VCOs in 130 nm CMOS technology

Author

Ali, Mohammed K. ; Subramanian, Viswanathan ; Zhang, Tao ; Boeck, Georg

Author_Institution

Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany

fYear

2012

fDate

12-14 March 2012

Firstpage

1

Lastpage

4

Abstract

This paper compares a conventional NMOS VCO with a transformer feedback (TF) VCO in 130 nm CMOS technology. A design procedure to achieve the optimum performance available is presented. Device sizes and biasing current are chosen for lowest possible phase noise. The conventional NMOS VCO achieves -103 dBc/Hz phase noise at 1 MHz offset with 2 GHz tuning range and 18 mW power consumption and the TFVCO shows -99 dBc/Hz phase noise at 1 MHz with 3.3 GHz tuning range and 5 mW power consumption.

Keywords

CMOS analogue integrated circuits; MOS integrated circuits; field effect MMIC; microwave oscillators; phase noise; voltage-controlled oscillators; CMOS technology; NMOS VCO; TFVCO; differential K-band VCO; frequency 1 MHz; frequency 2 GHz; frequency 3.3 GHz; phase noise; power 18 mW; power 5 mW; power consumption; size 130 nm; MOS devices; Phase noise; Transistors; Tuning; Voltage-controlled oscillators; 130 nm CMOS; All-NMOS VCO; Phase noise; TFVCO; Tuning range; Voltage Controlled Oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (GeMiC), 2012 The 7th German

Conference_Location

Ilmenau

Print_ISBN

978-1-4577-2096-3

Electronic_ISBN

978-3-9812668-4-9

Type

conf

Filename

6185203