Title :
A high-gain X-band GaN-MMIC power amplifier
Author :
Ersoy, Erhan ; Meliani, Chafik ; Chevtchenko, Serguei ; Kurpas, Paul ; Matalla, Mathias ; Heinrich, Wolfgang
Author_Institution :
Ferdinand-Braun-Inst. (FBH), Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
In this paper, a high-gain X-band MMIC power amplifier is presented. The amplifier is based on 0.25μm-gate GaN HEMTs and realized as coplanar circuit using the 4-inch process line at FBH. The circuit delivers almost 9 W output power at 10 GHz, with final stage drain efficiency of 32%.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; HEMT; coplanar circuit; final stage drain efficiency; frequency 10 GHz; high-gain X-band MMIC power amplifier; output power; size 0.25 mum; Gain; Gallium nitride; Impedance; Logic gates; MODFETs; Power amplifiers; CPW; Gallium nitride; X-band; power amplifier;
Conference_Titel :
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location :
Ilmenau
Print_ISBN :
978-1-4577-2096-3
Electronic_ISBN :
978-3-9812668-4-9
