Title :
An experimentally verified IGBT model implemented in the Saber circuit simulator
Author :
Hefner, Allen R., Jr. ; Diebolt, Daniel M.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A physics-based insulated gate bipolar transistor (IGBT) model is implemented in the general-purpose circuit simulator Saber. The IGBT model includes all of the physical effects that have been shown to be important for describing IGBTs, and the model is valid for general external circuit conditions. The Saber IGBT model is evaluated for the range of static and dynamic conditions in which the device is intended to be operated, and the simulations compare well with experimental results for all of the conditions studied
Keywords :
digital simulation; insulated gate bipolar transistors; semiconductor device models; IGBT; Saber circuit simulator; dynamic conditions; external circuit conditions; insulated gate bipolar transistor; static conditions; Bipolar transistors; Capacitance; Circuit simulation; Current supplies; Epitaxial layers; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Microelectronics; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1991. PESC '91 Record., 22nd Annual IEEE
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-0090-4
DOI :
10.1109/PESC.1991.162645
