Title :
The new high power density 7th generation IGBT module for compact power conversion systems
Author :
Ogawa, Eri ; Kawabata, Junya ; Kusunoki, Yoshiyuki ; Onozawa, Yuichi ; Nishmura, Yoshitaka ; Kobayashi, Yasuyuki ; Ikawa, Osamu
Author_Institution :
Fuji Electr. Co., Ltd., Nagano, Japan
Abstract :
Major requirements for power conversion systems are “further downsizing” and “higher efficiency”. Enhanced power density of the power modules will be the key to succeed. Higher reliability in continuous high-temperature operation will be the major challenge. The performances of the modules were significantly improved by further improvement of the chip characteristics and the development of new high reliability package materials and technologies. Additionally, the maximum operating temperature was even increased to up to 175°C. The new 7th generation IGBT module realized further downsizing and higher efficiency of power conversion systems.
Keywords :
circuit reliability; insulated gate bipolar transistors; power conversion; chip characteristics improvement; compact power conversion system; continuous high-temperature operation reliability; high power density 7th generation IGBT power module; high reliability package materials; insulated gate bipolar transistor module; Aluminum nitride; III-V semiconductor materials; Insulated gate bipolar transistors; Power conversion; Reliability; Resistance; Substrates; High efficiency; High power density; High reliability; Power modules;
Conference_Titel :
Power Electronics for Distributed Generation Systems (PEDG), 2015 IEEE 6th International Symposium on
Conference_Location :
Aachen
DOI :
10.1109/PEDG.2015.7223063
