• DocumentCode
    1844005
  • Title

    Improved Measurement Procedure for Extremely Low Noise Figures of FETs in the Frequency Range below 3 GHz

  • Author

    Heymann, P. ; Doerner, Ralf ; Prinzler, H.

  • Author_Institution
    Ferdinand-Braun-Institut fÿr Höchstfrequenztechnik, Rudower Chaussee 5, D 12489 Berlin, Germany, Phone: +49 30 6392 2643; Fax: +49 30 6392 2642, e-mail: heymann@fbh-berlin.de
  • Volume
    31
  • fYear
    1997
  • fDate
    13-13 June 1997
  • Firstpage
    161
  • Lastpage
    170
  • Abstract
    Full noise characterization of transistors comprises the experimental determination of minimum noise figure NF,;,, noise resistance R,, and optimum source reflection coefficient magnitude irupaJnd angle L.. The usual commercial and laboratory equipment is mainly designed for the microwave and millimeter-wave frequency range and the performance in the RF and lower GHz range (f < 3 GHz) deteriorates. This range, however, is of special interest for wireless applications.
  • Keywords
    Circuit noise; FETs; Frequency measurement; Impedance; Noise figure; Noise measurement; Reflection; Spectral analysis; Testing; Tuners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ARFTG Conference Digest-Spring, 49th
  • Conference_Location
    Denver, CO, USA
  • Print_ISBN
    0-7803-5686-1
  • Type

    conf

  • DOI
    10.1109/ARFTG.1997.327225
  • Filename
    4119910
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1844005