Title :
Improved Measurement Procedure for Extremely Low Noise Figures of FETs in the Frequency Range below 3 GHz
Author :
Heymann, P. ; Doerner, Ralf ; Prinzler, H.
Author_Institution :
Ferdinand-Braun-Institut fÿr Höchstfrequenztechnik, Rudower Chaussee 5, D 12489 Berlin, Germany, Phone: +49 30 6392 2643; Fax: +49 30 6392 2642, e-mail: heymann@fbh-berlin.de
Abstract :
Full noise characterization of transistors comprises the experimental determination of minimum noise figure NF,;,, noise resistance R,, and optimum source reflection coefficient magnitude irupaJnd angle L.. The usual commercial and laboratory equipment is mainly designed for the microwave and millimeter-wave frequency range and the performance in the RF and lower GHz range (f < 3 GHz) deteriorates. This range, however, is of special interest for wireless applications.
Keywords :
Circuit noise; FETs; Frequency measurement; Impedance; Noise figure; Noise measurement; Reflection; Spectral analysis; Testing; Tuners;
Conference_Titel :
ARFTG Conference Digest-Spring, 49th
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1997.327225
