Title :
Impact of metal deposition process upon reliability of dual-damascene copper interconnects
Author :
Ishikawa, Kensuke ; Iwasaki, Tomio ; Fujii, Takako ; Nakajima, Nobue ; Miyauchi, Masanori ; Ohshima, Takayuki ; Noguchi, Junji ; Aoki, Hideo ; Saito, Tatsuyuki
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
In this paper, we discuss the effect of adhesion strength between TaN/Ta barrier and copper (Cu) upon the reliability of dual-damascene Cu interconnects as well as the effect of stepcoverage. The ionized metal bias sputtering (IMBS) method was applied to TaN/Ta barrier and Cu seed formation of 0.13 μm-node dual-damascene Cu interconnects and the electromigration and stress migration characteristics were successfully improved.
Keywords :
adhesion; copper; electromigration; integrated circuit interconnections; integrated circuit reliability; internal stresses; sputter deposition; tantalum; tantalum compounds; thin films; 0.13 micron; Cu; Cu seed formation; TaN-Ta; TaN-Ta barrier; adhesion strength; copper; dual-damascene copper interconnects; electromigration; ionized metal bias sputtering; metal deposition process; reliability; stress migration; Adhesives; Atherosclerosis; Copper; Electromigration; Integrated circuit interconnections; Scanning electron microscopy; Semiconductor device reliability; Sputtering; Testing; Wire;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219701
