Title :
Influence of dielectric layers on electromigration results in Cu interconnects
Author :
Arnaud, Laurent ; Guillaumond, J.F. ; Pesci, O. ; Fayolle, M. ; Reimbold, G.
Author_Institution :
CEA-LETI, Grenoble, France
Abstract :
Electromigration studies showed that an activation energy Ea∼0.9 eV was obtained in Cu interconnects with SiOC as lateral dielectric for linewidths down to 0.28 μm. Failure analysis showed similar EM diffusion path in Cu/SiOC interconnects in comparison to Cu/SiO2 interconnects. Moreover electromigration lifetime is improved when a SiC cap layer is used: lifetime is increased in 0.4 μm by a factor of 4 in comparison to SiN cap layer.
Keywords :
copper; diffusion; electromigration; failure analysis; integrated circuit interconnections; silicon compounds; Cu interconnects; Cu-SiOC; Cu-SiOC interconnects; EM diffusion path; SiC; SiC cap layer; dielectric layers; electromigration lifetime; failure analysis; linewidths; Copper; Dielectric constant; Electromigration; Integrated circuit interconnections; Microstructure; Monitoring; Silicon carbide; Silicon compounds; Temperature; Testing;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219703
