Title :
Electrothermal modeling of multi-fingered PHEMTs applying a global approach
Author :
Byk, E. ; Lopez, D. ; Baillargeat, D. ; Verdeyme, S. ; Quere, R. ; Sommet, R. ; Guillon, P. ; Laporte, E. ; Soulard, M.
Author_Institution :
IRCOM-UMR, CNRS, Limoges, France
Abstract :
In this paper, a global method is proposed to characterize the electrothermal behavior of multi-fingered Pseudomorphic High Electron-Mobility Transistors (PHEMTs). The method is based on the coupling of circuit, electromagnetic and thermal softwares. It is shown that scaling rules have just to be applied for intrinsic performances of a transistor when extrinsic elements and thermal effects are rigorously taken into account.
Keywords :
electronic engineering computing; finite element analysis; high electron mobility transistors; method of moments; microwave field effect transistors; semiconductor device models; thermal analysis; 2 to 40 GHz; 2.5D simulator; 3D simulator; Agilent Momentum; FEM; MoM; electrothermal modeling; finite element method; global method; high electron-mobility transistors; large signal model; multi-fingered PHEMTs; pseudomorphic HEMTs; scaling rules; thermal effects; Aerospace industry; Circuit simulation; Computational modeling; Coupling circuits; Electromagnetic coupling; Electromagnetic heating; Electromagnetic modeling; Electrothermal effects; PHEMTs; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012280
