Title :
A novel circular structure for the extraction of the contact resistivity-application to the Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si and TiN/Ti/p/sup +/Si interfaces
Author :
Scorzoni, Andrea ; Vanzi, Massimo ; Caprile, Candida
Author_Institution :
CNR, Bologna, Italy
Abstract :
A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.<>
Keywords :
contact resistance; electrical conductivity measurement; integrated circuit technology; ohmic contacts; palladium compounds; semiconductor-metal boundaries; titanium compounds; Pd/sub 2/Si-Si; Pd/sub 2/Si-n/sup +/Si contacts; TiN-Ti-Si; TiN-Ti-n/sup +/Si contacts; TiN-Ti-p/sup +/Si contacts; VLSI contacts; analytical form; circular resistor; circular structure; contact resistance; contact resistivity extraction; extracting metal-semiconductor contact resistivity; metal semiconductor contacts; ohmic contacts; silicides; test structures; Boundary conditions; Chromium; Circuit testing; Conductivity; Contact resistance; Equations; Geometry; Kelvin; Resistors; Tin;
Conference_Titel :
Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/ICMTS.1990.67909
