Effects of templating byproducts on adhesion of nanoporous dielectric films

Author

Maidenberg, Dan ; Volksen, Willi ; Miller, Robert ; Dauskardt, Reinhold

Author_Institution

Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA

fYear

2003

fDate

2-4 June 2003

Firstpage

48

Lastpage

50

Abstract

Dielectric films (methylsilsesquioxane) with induced porosity were prepared and tested for their adhesion to metal and SiO₂ interfaces. Fracture mechanics techniques were employed to produce quantifiable and reproducible data without the confounding effects of residual stress relaxation. The effect of porosity on adhesion was shown to depend strongly on which interface was being measured. Remarkable increases in adhesion at the SiO₂ interface have been attributed to molecular bridging mechanisms activated by remnants of the pore-creating molecules.

Keywords

adhesion; dielectric materials; dielectric thin films; nanoporous materials; organic compounds; porosity; silicon compounds; stress relaxation; SiO₂; adhesion; metal-SiO₂ interfaces; methylsilsesquioxane; molecular bridging mechanisms; nanoporous dielectric films; pore-creating molecules; porosity; residual stress relaxation; Adhesives; Biological materials; Dielectric films; Dielectric materials; Dielectric thin films; Nanoporous materials; Residual stresses; Silicon; Strain measurement; Surface cracks;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219709

Filename

1219709