Title :
Theoretical analysis of ultra low-k porous films with periodic pore arrangement and high elastic modulus
Author :
Miyoshi, Hidenori ; Matsuo, Hisanori ; Oku, Yoshiaki ; Tanaka, Hirofumi ; Yamada, Koji ; Mikami, Noboru ; Takada, Syozo ; Hata, Nobuhiro ; Kikkawa, Takamaro
Author_Institution :
Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
Abstract :
We have demonstrated that the periodicity in pore structure increases the elastic modulus E with maintaining the dielectric constant k by analytical and numerical calculations. The periodic porous silica films having the hexagonal arrangement of circular cylindrical pores with k<2.0 and E>3 GPa is feasible at the porosity of 0.62 with the bulk material of kb=4.0 and Eb>21 GPa. Calculation results have been confirmed with the experimental data by taking into account the experimental pore shape. The periodic porous silica films having the three-dimensional cubic structure of spherical pores with k<2.0 and E>3GPa is feasible at the porosity of 0.60 using the bulk material of kb=4.0 and Eb>12 GPa.
Keywords :
dielectric materials; dielectric thin films; elastic moduli; finite element analysis; periodic structures; permittivity; porosity; porous materials; silicon compounds; SiO2; dielectric constant; elastic modulus; pore structure; porosity; porous silica films; theoretical analysis; three-dimensional cubic structure; ultra low-k porous films; Composite materials; Dielectric constant; Dielectric materials; Mechanical factors; Periodic structures; Semiconductor device modeling; Silicon compounds; Substrates; Two dimensional displays; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219712
