Theoretical analysis of ultra low-k porous films with periodic pore arrangement and high elastic modulus

Author

Miyoshi, Hidenori ; Matsuo, Hisanori ; Oku, Yoshiaki ; Tanaka, Hirofumi ; Yamada, Koji ; Mikami, Noboru ; Takada, Syozo ; Hata, Nobuhiro ; Kikkawa, Takamaro

Author_Institution

Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan

fYear

2003

fDate

2-4 June 2003

Firstpage

57

Lastpage

59

Abstract

We have demonstrated that the periodicity in pore structure increases the elastic modulus E with maintaining the dielectric constant k by analytical and numerical calculations. The periodic porous silica films having the hexagonal arrangement of circular cylindrical pores with k<2.0 and E>3 GPa is feasible at the porosity of 0.62 with the bulk material of k_b=4.0 and E_b>21 GPa. Calculation results have been confirmed with the experimental data by taking into account the experimental pore shape. The periodic porous silica films having the three-dimensional cubic structure of spherical pores with k<2.0 and E>3GPa is feasible at the porosity of 0.60 using the bulk material of k_b=4.0 and E_b>12 GPa.

Keywords

dielectric materials; dielectric thin films; elastic moduli; finite element analysis; periodic structures; permittivity; porosity; porous materials; silicon compounds; SiO₂; dielectric constant; elastic modulus; pore structure; porosity; porous silica films; theoretical analysis; three-dimensional cubic structure; ultra low-k porous films; Composite materials; Dielectric constant; Dielectric materials; Mechanical factors; Periodic structures; Semiconductor device modeling; Silicon compounds; Substrates; Two dimensional displays; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219712

Filename

1219712