A practical small-signal equivalent circuit model for RF-MOSFETs valid up to the cut-off frequency

Author

Kawano, H. ; Nishizawa, M. ; Matsumoto, S. ; Mitani, S. ; Tanaka, M. ; Nakayama, N. ; Ueno, H. ; Miura-Mattausch, M. ; Mattausch, H.J.

Author_Institution

Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

2121

Abstract

The non-quasistatic contribution to the Y-parameters is shown to be much smaller than usually expected. This is especially true for advanced pocket-implant MOSFET technologies being developed for RF devices. Therefore, a simple and practical equivalent-circuit model valid up to the cut-off frequency becomes possible. The small interdependence of the different model elements allows an explicit and sequential extraction of the individual element values.

Keywords

MOSFET; UHF field effect transistors; equivalent circuits; microwave field effect transistors; semiconductor device models; RF-MOSFETs; Y-parameters; advanced pocket-implant technologies; cut-off frequency; element values; model elements; nonquasistatic contribution; sequential extraction; small-signal equivalent circuit model; Capacitance; Circuit simulation; Cost function; Cutoff frequency; Equivalent circuits; MOSFET circuits; Poisson equations; Radio frequency; Roentgenium; Signal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012289

Filename

1012289