HBT small signal T and /spl pi/ model extraction using a simple, robust and fully analytical procedure

Author

Tasker, P.J. ; Fernandez-Barciela, M.

Author_Institution

Univ. of Cardiff, UK

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

2129

Abstract

A simple and fully analytical procedure is proposed in this paper for the direct extraction of the HBT small signal equivalent circuit model, whether it be the T- or hybrid /spl pi/-topology, from DC and single-frequency s-parameter measurements. DC data is required since it is possible to show that direct extraction from single frequency s-parameters is not possible, without prior knowledge of one parameter. The extraction procedure developed is based on the prior knowledge of dc current gain, /spl beta//sub 0/. Excellent results have been obtained when applied to InGaP/GaAs and InP based HBTs.

Keywords

S-parameters; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; /spl pi/ model; DC current gain; DC measurements; InGaP-GaAs; InGaP/GaAs HBT; InP; InP HBT; T model; parameter extraction; single-frequency S-parameter measurements; small-signal equivalent circuit model; Circuit topology; Current measurement; Equivalent circuits; Feedback; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Network topology; Robustness; Signal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012291

Filename

1012291