DocumentCode :
1844550
Title :
An overview of stress free polishing of Cu with ultra low-k(k<2.0) films
Author :
Pallinti, Jayanthi ; Lakshminarayanan, S. ; Barth, Will ; Wright, Peter ; Lu, Michael ; Reder, Steve ; Kwak, Leo ; Catabay, Wilbur ; Wang, David ; Ho, Fred
Author_Institution :
Adv. Process Module Dev., LSI Logic Corp., Gresham, OR, USA
fYear :
2003
fDate :
2-4 June 2003
Firstpage :
83
Lastpage :
85
Abstract :
An overview of the process performance of Stress Free Polishing technology (SFP) for copper removal at sub 90 nm nodes is presented in this paper. A brief description of the SFP process and polishing characteristics is provided along with electrical results. Dependence of post SFP copper surface quality on the roughness of the incoming films and post plating anneal conditions is also discussed.
Keywords :
annealing; copper; dielectric thin films; polishing; surface roughness; 90 nm; Cu; copper surface quality; post plating annealing; stress free polishing; ultra low-k films; Chemical technology; Copper; Delamination; Etching; Large scale integration; Logic; Planarization; Rough surfaces; Stress; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
Type :
conf
DOI :
10.1109/IITC.2003.1219719
Filename :
1219719
Link To Document :
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