Title :
An empirical HBT Large Signal Model for CAD
Author :
Angelov, I. ; Choumei, K. ; Inoue, A.
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
Extensive measurements were performed at different temperatures on GaAs HBT´s in order to obtain a simple Large Signal Model usable in CAD. The model was experimentally evaluated by DC, S and Power Spectrum measurements and good correspondence was obtained between measurements and experiment.
Keywords :
CAD; III-V semiconductors; S-parameters; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; CAD; DC measurements; GaAs; GaAs HBT; S-parameter measurements; large-signal model; power spectrum measurements; Design automation; Equivalent circuits; Heterojunction bipolar transistors; Performance evaluation; Physics; Power measurement; Semiconductor diodes; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012293
