Effect of CMP slurry environments on subcritical crack growth in ultra low-k dielectric materials

Author

Guyer, Eric P. ; Dauskardt, Reinhold H.

Author_Institution

Dept. of Mater. Sci. and Eng., Stanford Univ., CA, USA

fYear

2003

fDate

2-4 June 2003

Firstpage

89

Lastpage

91

Abstract

The success of next generation interconnects relies to a large degree on the integration of low-k dielectric (LKD) materials capable of surviving chemical mechanical planarization (CMP). However, little is currently understood about the effect CMP slurry environments have on the reliability of these advanced dielectrics. Accordingly, the focus of this research was to characterize and model the effect of CMP solution chemistry on adhesion and subcritical debond growth in thin-film structures containing LKD materials for future generation devices.

Keywords

adhesion; chemical mechanical polishing; cracks; dielectric thin films; integrated circuit interconnections; metallisation; permittivity; planarisation; slurries; CMP slurry environments; CMP solution chemistry; adhesion; chemical mechanical planarization; crack growth; dielectric materials; interconnects; subcritical debond growth; thin-film structures; Acceleration; Adhesives; Chemicals; Chemistry; Dielectric materials; Dielectric substrates; Dielectric thin films; Glass; Slurries; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219721

Filename

1219721