Title :
3-Dimentional TEM stereo observation technology for characterization of pores in low-k film
Author :
Ogawa, Shinichi ; Shimanuki, Junichi ; Shimada, Miyoko ; Nasuno, Takashi ; Inoue, Yasuhide ; Mori, Hirotaro
Author_Institution :
Res. Dept., Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
Abstract :
Transmission Electron Microscopy (TEM) has been applied to characterize pores in low-k films 3-dimentionally for the first time. To obtain the 3-dimentional shape of pores, TEM observations were operated in a stereo mode. The 3-dimentional TEM observations results showed that pores are not spherical but random in the shape and that pores do not exist uniformly but unevenly distribute in the low-k films and they tend to concentrate at the interface areas in examined SiC/low-k films stacks after commercially adequate cure treatments. The pores migrate in the low-k films during anneal at process temperatures such as 400 degrees C.
Keywords :
annealing; dielectric materials; dielectric thin films; elemental semiconductors; interconnections; porosity; porous materials; silicon; silicon compounds; transmission electron microscopy; wide band gap semiconductors; 400 degC; Si-SiO2-SiC; SiC/low-k films stacks; annealing; cure treatments; interconnections; interface pores; pores migration; three-dimentional TEM stereo observation; transmission electron microscopy; Adhesives; Annealing; Dielectric constant; Dielectric materials; Mechanical factors; Semiconductor films; Shape; Silicon carbide; Transmission electron microscopy; Voltage;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219724
