DocumentCode :
1844703
Title :
Structure variation and annealing effect on mechanical properties of single carbon films
Author :
Lai, C.W. ; Wu, B.H. ; Hung, S.T. ; Chung, C.K.
Author_Institution :
Dept. of Mech. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2009
fDate :
18-21 Oct. 2009
Firstpage :
197
Lastpage :
200
Abstract :
The aim of this study is to investigate the effect of thickness variation, rapid thermal annealing and silicon layer addition on mechanical property of single carbon film by using nanoindentation. From the results, Raman spectra showed that ID/IG ratio decreased with increasing carbon film thickness on single-layer structure at room temperature (RT). The higher the ID/IG, the more the sp2 bonds are. The evolution of both hardness and Young´s modulus of films had the inverse trend as the formation of sp2 bond. Therefore, it is noted that less sp2 bond formation was beneficial to enhance the hardness and Young´s modulus of single carbon layer structure. Compared with single-layer structure, hardness and Young´s modulus of C/Si two-layer decreased through Si addition. Under thermal treatment process, it can be found that hardness and Young´s modulus decreased at 750°C due to graphitization then the SiC was formed at higher annealing temperature on the surface of two-layer structure lead to hardness enhancement.
Keywords :
Raman spectra; Young´s modulus; carbon; graphitisation; hardness; nanoindentation; rapid thermal annealing; thin films; Raman spectra; Young modulus; carbon film mechanical properties; graphitization; hardness enhancement; nanoindentation; rapid thermal annealing; silicon layer addition; structure variation; thermal treatment process; thickness variation; Annealing; Bonding; Films; Silicon; Silicon carbide; annealing; carbon; ion beam sputtering; mechanical property;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Molecular Medicine and Engineering (NANOMED), 2009 IEEE International Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-5528-7
Type :
conf
DOI :
10.1109/NANOMED.2009.5559086
Filename :
5559086
Link To Document :
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