Implementation of a scalable and statistical VBIC model for large-signal and intermodulation distortion analysis of SiGe HBTs

Author

Ramana Murty, M. ; Newton, K.M. ; Sweeney, S.L. ; Sheridan, D.C. ; Harame, D.L.

Author_Institution

Commun. R&D Center, IBM Corp., Essex Junction, VT, USA

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

2165

Abstract

This work examines for the first time the utility of the VBIC model for the analysis of 2-tone intermodulation distortion behavior of SiGe HBTs. The model takes into account all important effects for accurate modeling of large signal behavior including self-heating, weak-avalanche multiplication, quasi-saturation effects, and all device capacitances. Periodic-Steady State and Harmonic Balance simulations are performed and the model is validated by load-pull measurements.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; intermodulation distortion; semiconductor device models; semiconductor materials; SiGe; SiGe HBT; VBIC model; device capacitance; harmonic balance simulation; intermodulation distortion; large-signal analysis; load-pull measurement; periodic steady-state simulation; quasi-saturation; self-heating; weak-avalanche multiplication; BiCMOS integrated circuits; Circuit simulation; Distortion measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Intermodulation distortion; Isolation technology; Performance evaluation; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012300

Filename

1012300