DocumentCode :
1844891
Title :
The application of ALD WNxCy as a copper diffusion barrier
Author :
Smith, S. ; Book, G. ; Li, W.M. ; Sun, Y.M. ; Gillespie, P. ; Tuominen, M. ; Pfeifer, K.
Author_Institution :
Philips Semicond., XXX, France
fYear :
2003
fDate :
2-4 June 2003
Firstpage :
135
Lastpage :
137
Abstract :
A 2.7 nm ALD WNxCy copper barrier was integrated into fully functional backend dual-damascene devices built in SiO2 on 200-mm wafers at International Sematech. Electromigration results were extraordinary, with average time to failure more than 10 times longer than standard PVD Ta. Electrical and physical results suggest that ultrathin WNxCY is an excellent copper barrier and meets the requirements for integration, including: Via resistance, electromigration, barrier integrity, film continuity, etc.
Keywords :
copper; diffusion barriers; electric resistance; electromigration; thin films; tungsten compounds; 2.7 nm; 200 mm; Cu; SiO2; WNxCy; atomic layer deposition; barrier integrity; copper diffusion barrier; electric resistance; electromigration; film continuity; ultrathin WNxCY; Atherosclerosis; Copper; Dielectric measurements; Energy measurement; Failure analysis; Scattering; Spectroscopy; Testing; Thermal stresses; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
Type :
conf
DOI :
10.1109/IITC.2003.1219734
Filename :
1219734
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1844891
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