• DocumentCode
    1844891
  • Title

    The application of ALD WNxCy as a copper diffusion barrier

  • Author

    Smith, S. ; Book, G. ; Li, W.M. ; Sun, Y.M. ; Gillespie, P. ; Tuominen, M. ; Pfeifer, K.

  • Author_Institution
    Philips Semicond., XXX, France
  • fYear
    2003
  • fDate
    2-4 June 2003
  • Firstpage
    135
  • Lastpage
    137
  • Abstract
    A 2.7 nm ALD WNxCy copper barrier was integrated into fully functional backend dual-damascene devices built in SiO2 on 200-mm wafers at International Sematech. Electromigration results were extraordinary, with average time to failure more than 10 times longer than standard PVD Ta. Electrical and physical results suggest that ultrathin WNxCY is an excellent copper barrier and meets the requirements for integration, including: Via resistance, electromigration, barrier integrity, film continuity, etc.
  • Keywords
    copper; diffusion barriers; electric resistance; electromigration; thin films; tungsten compounds; 2.7 nm; 200 mm; Cu; SiO2; WNxCy; atomic layer deposition; barrier integrity; copper diffusion barrier; electric resistance; electromigration; film continuity; ultrathin WNxCY; Atherosclerosis; Copper; Dielectric measurements; Energy measurement; Failure analysis; Scattering; Spectroscopy; Testing; Thermal stresses; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
  • Print_ISBN
    0-7803-7797-4
  • Type

    conf

  • DOI
    10.1109/IITC.2003.1219734
  • Filename
    1219734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1844891