The improved CVD-Al metallization for deep small contact filling using selective wetting process

Author

Seo, Jung Hun ; Kim, Byung Hee ; Lee, Jong Myeong ; Park, Hee Sook ; Yun, Ju-Young ; Rah, Young Seop ; Choi, Gil Heyun ; Chung, U. In ; Moon, Joo-Tae

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea

fYear

2003

fDate

2-4 June 2003

Firstpage

138

Lastpage

140

Abstract

The new barrier metal structure using selective wetting layer was proposed. This process using physical vapor deposition (PVD) Ti as the controlling layer for conformal chemical vapor deposition (CVD) Al layer shows an excellent filling capability for deep small contact and good electrical properties as well as the remarkable surface morphology, which can be applied for the new metallization process such as metal contacts and via holes filling.

Keywords

aluminium; chemical vapour deposition; integrated circuit metallisation; metallic thin films; surface morphology; wetting; Al; CVD Al metallization; PVD; Ti; barrier metal structure; chemical vapor deposition; deep small contact filling; electrical properties; holes filling; metal contacts; physical vapor deposition; selective wetting layer; selective wetting process; surface morphology; Artificial intelligence; Atomic layer deposition; Bonding; Contacts; Filling; Gas insulated transmission lines; Hydrogen; Metallization; Moon; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219735

Filename

1219735