• DocumentCode
    1844945
  • Title

    Paving the way for full-fluid IC metallization using supercritical carbon dioxide

  • Author

    Kondoh, E. ; Vezin, V. ; Shigama, K. ; Sunada, S. ; Kubo, K. ; Ohta, T.

  • Author_Institution
    Fac. of Eng., Univ. of Yamanashi, Japan
  • fYear
    2003
  • fDate
    2-4 June 2003
  • Firstpage
    141
  • Lastpage
    143
  • Abstract
    Metal thin films for IC metallization are currently deposited either from vapor (PVD/CVD) or liquid (e.g. ECD). This paper reports critical bases for full IC metallization using only supercritical carbon dioxide (scCO2) fluids as a deposition medium. High-aspect-ratio filling capability, (111)-preferential growth, low temperature deposition possibility, important roles of solvent capability of scCO2 including F-less solid precursor utilization, and barrier metal deposition possibility are described.
  • Keywords
    copper; integrated circuit metallisation; metallic thin films; (111) preferential growth; CVD; Cu; PVD; barrier metal deposition; deposition medium; full fluid IC metallization; high aspect ratio filling capability; supercritical carbon dioxide; Carbon dioxide; Copper; Electrons; Filling; Hydrogen; Inductors; Metallization; Solvents; Sputtering; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
  • Print_ISBN
    0-7803-7797-4
  • Type

    conf

  • DOI
    10.1109/IITC.2003.1219736
  • Filename
    1219736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1844945