DocumentCode :
1844962
Title :
7-decades tunable translinear SiGe BiCMOS 3-phase sinusoidal oscillator
Author :
Loizos, Dimitrios N. ; Sotiriadis, Paul P. ; Cauwenberghs, Gert
Author_Institution :
Div. of Biol. Sci., Univ. of California, La Jolla, CA
fYear :
2008
fDate :
18-21 May 2008
Firstpage :
2853
Lastpage :
2856
Abstract :
A fully differential translinear 3-phase sinusoidal oscillator architecture is presented. The architecture is meant for BiCMOS implementation and uses only NPN devices, typically of higher performance than their PNP counterparts in most technologies. The architecture features both frequency and amplitude control and expressions are derived showing the dependence of these controls to external current biases. Measurements on a 0.5 mum SiGe BiCMOS implementation of the architecture demonstrate frequency control from below 80 Hz to above 800 MHz, general agreement between theory and actual data for the amplitude of oscillation, as well as low distortion. Power consumption scales with the frequency of operation and amounts to ~2 muW/MHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; oscillators; semiconductor materials; SiGe; differential translinear 3-phase sinusoidal oscillator architecture; frequency control; power consumption; tunable translinear BiCMOS; BiCMOS integrated circuits; Bipolar transistors; Circuit testing; Computer architecture; Frequency synthesizers; Germanium silicon alloys; Integrated circuit synthesis; Oscillators; Silicon germanium; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
Type :
conf
DOI :
10.1109/ISCAS.2008.4542052
Filename :
4542052
Link To Document :
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