DocumentCode
1844962
Title
7-decades tunable translinear SiGe BiCMOS 3-phase sinusoidal oscillator
Author
Loizos, Dimitrios N. ; Sotiriadis, Paul P. ; Cauwenberghs, Gert
Author_Institution
Div. of Biol. Sci., Univ. of California, La Jolla, CA
fYear
2008
fDate
18-21 May 2008
Firstpage
2853
Lastpage
2856
Abstract
A fully differential translinear 3-phase sinusoidal oscillator architecture is presented. The architecture is meant for BiCMOS implementation and uses only NPN devices, typically of higher performance than their PNP counterparts in most technologies. The architecture features both frequency and amplitude control and expressions are derived showing the dependence of these controls to external current biases. Measurements on a 0.5 mum SiGe BiCMOS implementation of the architecture demonstrate frequency control from below 80 Hz to above 800 MHz, general agreement between theory and actual data for the amplitude of oscillation, as well as low distortion. Power consumption scales with the frequency of operation and amounts to ~2 muW/MHz.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; oscillators; semiconductor materials; SiGe; differential translinear 3-phase sinusoidal oscillator architecture; frequency control; power consumption; tunable translinear BiCMOS; BiCMOS integrated circuits; Bipolar transistors; Circuit testing; Computer architecture; Frequency synthesizers; Germanium silicon alloys; Integrated circuit synthesis; Oscillators; Silicon germanium; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4542052
Filename
4542052
Link To Document