• DocumentCode
    1844962
  • Title

    7-decades tunable translinear SiGe BiCMOS 3-phase sinusoidal oscillator

  • Author

    Loizos, Dimitrios N. ; Sotiriadis, Paul P. ; Cauwenberghs, Gert

  • Author_Institution
    Div. of Biol. Sci., Univ. of California, La Jolla, CA
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    2853
  • Lastpage
    2856
  • Abstract
    A fully differential translinear 3-phase sinusoidal oscillator architecture is presented. The architecture is meant for BiCMOS implementation and uses only NPN devices, typically of higher performance than their PNP counterparts in most technologies. The architecture features both frequency and amplitude control and expressions are derived showing the dependence of these controls to external current biases. Measurements on a 0.5 mum SiGe BiCMOS implementation of the architecture demonstrate frequency control from below 80 Hz to above 800 MHz, general agreement between theory and actual data for the amplitude of oscillation, as well as low distortion. Power consumption scales with the frequency of operation and amounts to ~2 muW/MHz.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; oscillators; semiconductor materials; SiGe; differential translinear 3-phase sinusoidal oscillator architecture; frequency control; power consumption; tunable translinear BiCMOS; BiCMOS integrated circuits; Bipolar transistors; Circuit testing; Computer architecture; Frequency synthesizers; Germanium silicon alloys; Integrated circuit synthesis; Oscillators; Silicon germanium; Tunable circuits and devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4542052
  • Filename
    4542052