Title :
Permalloy loaded transmission line for high-speed interconnects
Author :
Wang, Pingshan ; Tien, Norman C. ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
In this work, we demonstrate: (1) permalloy can be incorporated with planar transmission lines using CMOS compatible process. Patterning the permalloy structures can extend its application well into the microwave frequency range, (2) the transmission line characteristics do not change under up to 50 mA current excitations, (3) the patterned permalloy reduces the magnetic coupling between two adjacent transmission lines by approximately 10 dB. The demonstrated operation frequency range, current drivability and magnetic field shielding property show that the lines can be used for high-speed interconnect applications in CMOS technologies.
Keywords :
CMOS integrated circuits; Permalloy; ferromagnetic materials; integrated circuit interconnections; magnetic shielding; transmission lines; 10 dB; CMOS compatible process; FeNi; Permalloy loaded transmission line; high-speed interconnects; magnetic coupling; magnetic field shielding; planar transmission lines; Capacitance; Distributed parameter circuits; Equivalent circuits; Frequency dependence; Inductance; Integrated circuit interconnections; Magnetic flux; Magnetic shielding; Saturation magnetization; Testing;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219741