Enhancing the electromigration resistance of copper interconnects

Author

Dixit, Girish ; Padhi, Deenesh ; Gandikota, Srinivas ; Yahalom, Joseph ; Parikh, Suketu ; Yoshida, Naomi ; Shankaranarayanan, Krish ; Chen, Jay ; Maity, Nirmalaya ; Yu, Jick

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

2003

fDate

2-4 June 2003

Firstpage

162

Lastpage

164

Abstract

Various factors such as grain boundary/surface diffusion as well as structural properties of materials are known to affect the final electro-migration (EM) behavior of copper interconnections. Results presented in this paper show that the barrier layer has a strong influence in controlling the width of EM failure distributions. EM tests of samples with alternate barrier, fill and capping layers show that atomic layer chemical vapor deposited (ALCVD) barrier and/or metallic cap layers are key to realize structures with superior EM lifetimes.

Keywords

CVD coatings; copper; electric resistance; electromigration; failure analysis; grain boundary diffusion; integrated circuit interconnections; integrated circuit testing; surface diffusion; Cu; ULSI; atomic layer chemical vapor deposition; barrier layer; capping layer; copper interconnects; electromigration failure; electromigration lifetimes; electromigration resistance; electromigration test; grain boundary-surface diffusion; structural properties; Aluminum; Atomic layer deposition; Copper; Delay; Dielectrics; Electromigration; Etching; Integrated circuit interconnections; Planarization; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219742

Filename

1219742