Advanced i-PVD barrier metal deposition technology for 90 nm Cu interconnects

Author

Park, K.-C. ; Kim, I.-R. ; Suh, B.-S. ; Choi, S.M. ; Song, W.S. ; Wee, Y.J. ; Lee, S.-G. ; Chung, J.-S. ; Chung, J.H. ; Hah, S.-R. ; Ahn, J.H. ; Lee, K.T. ; Kang, H.K. ; Suh, K.-P.

Author_Institution

Syst. LSI Div., Samsung Electron. Co. Ltd., Gyeonggi, South Korea

fYear

2003

fDate

2-4 June 2003

Firstpage

165

Lastpage

167

Abstract

An advanced i-PVD(ionized physical vapor deposition) barrier metal deposition technology has been developed for 90 nm Cu interconnects. The feature of this technology is to re-sputter the thick barrier metal at the contact/trench bottom, which was deposited by i-PVD, and attach the re-sputtered barrier metal to the sidewall. By using this technology, it is possible to obtain relatively thin bottom and thick sidewall coverage and thus a more conformal deposition. This technology is shown to be very effective in both lowering via resistance and improving reliabilities of 90 nm Cu interconnects embedded in SiOC-type low-k(k=2.9) inter-metal dielectric.

Keywords

contact resistance; copper; dielectric materials; integrated circuit interconnections; integrated circuit reliability; permittivity; silicon compounds; sputtering; tantalum compounds; vapour deposition; 90 nm; Cu interconnects; SiOC-Cu-TaN; SiOC-type low inter-metal dielectric; contact resistance; contact-trench bottom; ionized PVD barrier metal deposition; ionized physical vapor deposition; reliabilities; resputtering; thick barrier metal; thick sidewall coverage; Annealing; Chemical vapor deposition; Contact resistance; Dielectrics; Electrical resistance measurement; Glass; Large scale integration; Testing; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219743

Filename

1219743