Author :
Olmen, J. Van ; Wu, W. ; Hove, M. Van ; Travaly, Y. ; Brongersma, S.H. ; Eyckens, B. ; Maenhoudt, M. ; Aelst, J. Van ; Struyf, H. ; Demuynck, S. ; Tokei, Zs ; Vervoort, I. ; Sijmus, B. ; Vos, I. ; Ciofi, I. ; Stucchi, M. ; Maex, K. ; Iacopi, F.
Abstract :
This paper describes the integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond (Applied Materials) dielectric (k=2.85). Optical lithography (193 nm) with off-axis illumination was used to print the trenches. Integration issues are discussed, and resistance and RC delay data are presented. The method is applied to study the resistivity for sub 100 nm copper lines.
Keywords :
capacitance; copper; diamond; dielectric materials; electrical resistivity; integrated circuit interconnections; lighting; permittivity; photolithography; 193 nm; 85 nm; C-Cu; RC delay; black diamond; copper lines; copper trenches; dielectric constant; dipole illumination; optical lithography; printing; resistivity; single damascene integration; Copper; Dielectric materials; Dielectric substrates; Integrated optics; Lighting; Lithography; Plasma applications; Printing; Resists; Writing;
