Integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond using 193 nm optical lithography with dipole illumination

Author

Olmen, J. Van ; Wu, W. ; Hove, M. Van ; Travaly, Y. ; Brongersma, S.H. ; Eyckens, B. ; Maenhoudt, M. ; Aelst, J. Van ; Struyf, H. ; Demuynck, S. ; Tokei, Zs ; Vervoort, I. ; Sijmus, B. ; Vos, I. ; Ciofi, I. ; Stucchi, M. ; Maex, K. ; Iacopi, F.

Author_Institution

IMEC, Leuven, Belgium

fYear

2003

fDate

2-4 June 2003

Firstpage

171

Lastpage

173

Abstract

This paper describes the integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond (Applied Materials) dielectric (k=2.85). Optical lithography (193 nm) with off-axis illumination was used to print the trenches. Integration issues are discussed, and resistance and RC delay data are presented. The method is applied to study the resistivity for sub 100 nm copper lines.

Keywords

capacitance; copper; diamond; dielectric materials; electrical resistivity; integrated circuit interconnections; lighting; permittivity; photolithography; 193 nm; 85 nm; C-Cu; RC delay; black diamond; copper lines; copper trenches; dielectric constant; dipole illumination; optical lithography; printing; resistivity; single damascene integration; Copper; Dielectric materials; Dielectric substrates; Integrated optics; Lighting; Lithography; Plasma applications; Printing; Resists; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219745

Filename

1219745