Effects of passivation layer on stress relaxation in Cu line structures

Author

Dongwen Gan ; Yoon, Sean ; Ho, Paul S. ; Cresta, Phillippe ; Singh, Narendra ; Bower, Allan F. ; Leu, Jihpemg ; Shankar, Sadasivan

Author_Institution

Lab. for Interconnect & Packaging, Univ. of Texas, Austin, TX, USA

fYear

2003

fDate

2-4 June 2003

Firstpage

180

Lastpage

182

Abstract

In this study, we investigate the effect of passivation layer on mass transport by measuring stress relaxation in Cu damascene line structures. SiC and SiN_x passivation layers are investigated and compared with no passivation to examine the bonding effect on mass transport. The observed stress relaxation behavior is analyzed by a kinetic model considering the contribution to mass transport via various diffusion paths including the passivation interface. Results of this study show a significant effect due to the passivation layer that can be attributed to the interfacial chemistry.

Keywords

copper; kinetic theory; passivation; silicon compounds; stress relaxation; surface chemistry; surface diffusion; wide band gap semiconductors; Cu damascene line structures; Cu-SiC; Cu-SiN_x; SiC passivation layers; SiN_x passivation layers; interfacial chemistry; kinetic model; mass transport; stress relaxation; Bonding; Chemistry; Equations; Kinetic theory; Passivation; Silicon carbide; Stress measurement; Substrates; Thermal stresses; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219748

Filename

1219748