DocumentCode :
1845344
Title :
Metal-Insulator-Semiconductor Transmission Line Model
Author :
Williams, Dylan F.
Author_Institution :
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80303, Ph: (303)497-3138 Fax: (303)497-3122 E-mail: dylan@boulder.nist.gov
Volume :
33
fYear :
1998
fDate :
35947
Firstpage :
65
Lastpage :
71
Abstract :
This paper investigates the one-dimensional metal-insulator-semiconductor transmission line. It develops closed-form expressions for equivalent-circuit parameters, compares them to exact calculations, and explores their limitations. It also investigates the usual assumption of single-mode propagation and shows that, in certain fairly common circumstances, the fundamental mode of propagation becomes so lossy that it can no longer be considered to be the dominant propagating mode.
Keywords :
Conductivity; Electronic mail; Insulation; Magnetic semiconductors; Magnetic separation; Metal-insulator structures; NIST; Propagation losses; Substrates; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ARFTG Conference Digest-Spring, 51st
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5686-1
Type :
conf
DOI :
10.1109/ARFTG.1998.327280
Filename :
4119968
Link To Document :
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