• DocumentCode
    1845344
  • Title

    Metal-Insulator-Semiconductor Transmission Line Model

  • Author

    Williams, Dylan F.

  • Author_Institution
    National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80303, Ph: (303)497-3138 Fax: (303)497-3122 E-mail: dylan@boulder.nist.gov
  • Volume
    33
  • fYear
    1998
  • fDate
    35947
  • Firstpage
    65
  • Lastpage
    71
  • Abstract
    This paper investigates the one-dimensional metal-insulator-semiconductor transmission line. It develops closed-form expressions for equivalent-circuit parameters, compares them to exact calculations, and explores their limitations. It also investigates the usual assumption of single-mode propagation and shows that, in certain fairly common circumstances, the fundamental mode of propagation becomes so lossy that it can no longer be considered to be the dominant propagating mode.
  • Keywords
    Conductivity; Electronic mail; Insulation; Magnetic semiconductors; Magnetic separation; Metal-insulator structures; NIST; Propagation losses; Substrates; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ARFTG Conference Digest-Spring, 51st
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    0-7803-5686-1
  • Type

    conf

  • DOI
    10.1109/ARFTG.1998.327280
  • Filename
    4119968