Title :
Metal-Insulator-Semiconductor Transmission Line Model
Author :
Williams, Dylan F.
Author_Institution :
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80303, Ph: (303)497-3138 Fax: (303)497-3122 E-mail: dylan@boulder.nist.gov
Abstract :
This paper investigates the one-dimensional metal-insulator-semiconductor transmission line. It develops closed-form expressions for equivalent-circuit parameters, compares them to exact calculations, and explores their limitations. It also investigates the usual assumption of single-mode propagation and shows that, in certain fairly common circumstances, the fundamental mode of propagation becomes so lossy that it can no longer be considered to be the dominant propagating mode.
Keywords :
Conductivity; Electronic mail; Insulation; Magnetic semiconductors; Magnetic separation; Metal-insulator structures; NIST; Propagation losses; Substrates; Transmission lines;
Conference_Titel :
ARFTG Conference Digest-Spring, 51st
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1998.327280