DocumentCode
1845344
Title
Metal-Insulator-Semiconductor Transmission Line Model
Author
Williams, Dylan F.
Author_Institution
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80303, Ph: (303)497-3138 Fax: (303)497-3122 E-mail: dylan@boulder.nist.gov
Volume
33
fYear
1998
fDate
35947
Firstpage
65
Lastpage
71
Abstract
This paper investigates the one-dimensional metal-insulator-semiconductor transmission line. It develops closed-form expressions for equivalent-circuit parameters, compares them to exact calculations, and explores their limitations. It also investigates the usual assumption of single-mode propagation and shows that, in certain fairly common circumstances, the fundamental mode of propagation becomes so lossy that it can no longer be considered to be the dominant propagating mode.
Keywords
Conductivity; Electronic mail; Insulation; Magnetic semiconductors; Magnetic separation; Metal-insulator structures; NIST; Propagation losses; Substrates; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest-Spring, 51st
Conference_Location
Baltimore, MD, USA
Print_ISBN
0-7803-5686-1
Type
conf
DOI
10.1109/ARFTG.1998.327280
Filename
4119968
Link To Document