Minimizing power dissipation in chip to chip optical interconnects using optimal modulators and laser power

Author

Kapur, Pawan ; Saraswat, Krishna C.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

2003

fDate

2-4 June 2003

Firstpage

224

Lastpage

226

Abstract

We optimize the laser power and quantum well (QW) modulator metrics (contrast ratio (CR), insertion loss (IL)) to minimize power dissipation in short distance, modulator based, optical interconnects. We correspondingly quantify the optimal CR/IL modulator requirements as a function of various bit rates and a parameter dictated by voltage swing. This ultimately yields higher aggregate I/O bandwidth for chip to chip communication in power limited chips.

Keywords

Fabry-Perot resonators; elemental semiconductors; germanium; optical communication equipment; optical interconnections; optical modulation; quantum well devices; silicon; I/O bandwidth; Si-Ge; bit rate; chip-chip communication; chip-chip optical interconnects; contrast ratio; insertion loss; laser power; modulator based interconnects; optimal modulators; power dissipation; quantum well modulator metrics; short distance interconnects; voltage swing; Bit rate; Chromium; Insertion loss; Optical interconnections; Optical losses; Optical modulation; Power dissipation; Power lasers; Quantum well lasers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219760

Filename

1219760